Micron plans late 2027 launch of G11 NAND with double density

Micron Technology outlined its next generation of 3D NAND flash memory, designated G11, during an industry event this week. The company expects to begin high-volume production in the second half of 2027.

Micron stated that G11 will deliver approximately twice the storage density of its current G9 generation. The new chips will increase density from about 21 Gb/mm2 to 42 Gb/mm2 in triple-level-cell form. Input/output speeds are projected to rise by up to 50%, moving from 3,600 MT/s to 5,400 MT/s. Energy consumption per bit is expected to drop by more than 25%.

A primary structural change involves wafer-on-wafer bonding. This technique allows Micron to manufacture the NAND array and peripheral circuitry on separate wafers, each optimized for its specific function. The two wafers are then bonded together. Scott DeBoer, Micron's president and chief technology and products officer, confirmed the design uses this bonding method. He described G11 as the world's most advanced NAND.

The new architecture is intended for high-capacity solid-state drives in client and data center environments. It also targets storage devices built for artificial intelligence workloads, which require high bandwidth and energy efficiency. Micron noted that the 42 Gb/mm2 density figure exceeds the next-generation products from competitors Kioxia and Samsung.

Micron has not disclosed the exact number of active wordline layers for G11, though the design will exceed 400 layers. The company attributes the density gains to a combination of additional layers and a reduced memory cell pitch. DeBoer said the company is developing new high-mobility materials and denser cell architectures to support continued scaling in all three dimensions.

The company plans to release further technical details in 2027, closer to the start of production. Micron has not yet revealed specific density targets or production schedules for generations following G11. DeBoer indicated that the roadmap focuses on new materials and shrinking cell dimensions rather than layer count alone.